Research on the Radiation Effects and Compact Model of SiGe HBT
Yabin Sun
Springer Verlag, Singapore, 2019
121,95 €On orderDelivery: 2-3 weeks
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
- ISBN-13
- 9789811351815
- ISBN-10
- 9811351813
- Publisher
- Springer Verlag, Singapore
- Year
- 2019
- Publication date
- 2019-01-04
- Pages
- 168
- Dimensions
- 155x235x14
- Weight
- 302