Strain-Induced Effects in Advanced MOSFETs
Viktor Sverdlov
Springer Verlag GmbH, 2016
172,25 €On orderDelivery: 2-3 weeks
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
- ISBN-13
- 9783709119334
- ISBN-10
- 3709119332
- Publisher
- Springer Verlag GmbH
- Year
- 2016
- Publication date
- 2016-08-23
- Pages
- 252
- Dimensions
- 240x168x