Emerging Resistive Switching Memories
Jianyong Ouyang
Springer International Publishing AG, 2016
66,50 €On orderDelivery: 2-3 weeks
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
- ISBN-13
- 9783319315706
- ISBN-10
- 3319315706
- Publisher
- Springer International Publishing AG
- Year
- 2016
- Publication date
- 2016-07-11
- Pages
- 93
- Dimensions
- 235x155x