Strain-Engineered MOSFETs
C.K. Maiti, T.K. Maiti
Taylor & Francis Inc, 2012
287,25 €On orderDelivery: 2-3 weeks
This book brings together new developments in the area of strain-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors.
- ISBN-13
- 9781466500556
- ISBN-10
- 1466500557
- Publisher
- Taylor & Francis Inc
- Year
- 2012
- Publication date
- 2012-11-28
- Pages
- 320
- Dimensions
- 239x160x22
- Weight
- 602