Silicon Heterostructure Devices
John D. (Georgia Institute of Technology, Atlanta, USA) Cressler
Taylor & Francis Inc, 2007
189,25 €On orderDelivery: 2-3 weeks
Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. This book covers topics including device physics, broadband noise, performance limits, reliability, and engineered substrates.
- ISBN-13
- 9781420066906
- ISBN-10
- 1420066900
- Publisher
- Taylor & Francis Inc
- Year
- 2007
- Publication date
- 2007-12-13
- Pages
- 466
- Dimensions
- 254x178x
- Weight
- 1030