SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
John D. (Georgia Institute of Technology, Atlanta, USA) Cressler
Taylor & Francis Inc, 2007
283,95 €On orderDelivery: 2-3 weeks
Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe and Si-C alloys.
- ISBN-13
- 9781420066852
- ISBN-10
- 1420066854
- Publisher
- Taylor & Francis Inc
- Year
- 2007
- Publication date
- 2007-12-13
- Pages
- 262
- Dimensions
- 254x178x
- Weight
- 650