Strained-Si Heterostructure Field Effect Devices
C.K (Indian Institute of Technology, Kharagpur, India) Maiti, L.K Bera, S (University of Newcastle, UK) Chattopadhyay
Taylor & Francis Ltd, 2007
392,75 €On orderDelivery: 2-3 weeks
Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.
- ISBN-13
- 9780750309936
- ISBN-10
- 0750309938
- Publisher
- Taylor & Francis Ltd
- Year
- 2007
- Publication date
- 2007-01-11
- Pages
- 436
- Dimensions
- 234x156x
- Weight
- 735