Applications of Silicon-Germanium Heterostructure Devices
C.K (Indian Institute of Technology, Kharagpur, India) Maiti, G.A (The Queen's University of Belfast, UK) Armstrong
Taylor & Francis Ltd, 2001
437,75 €On orderDelivery: 2-3 weeks
Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics.
- ISBN-13
- 9780750307239
- ISBN-10
- 0750307234
- Publisher
- Taylor & Francis Ltd
- Year
- 2001
- Publication date
- 2001-07-20
- Pages
- 414
- Dimensions
- 234x156x
- Weight
- 449