Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Taylor & Francis Ltd, 2021
220,75 €On orderDelivery: 2-3 weeks
This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.
- ISBN-13
- 9780367554149
- ISBN-10
- 0367554143
- Publisher
- Taylor & Francis Ltd
- Year
- 2021
- Publication date
- 2021-09-29
- Pages
- 130
- Dimensions
- 213x379x15
- Weight
- 362